, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 stb75nf75 STP75NF75 - STP75NF75fp n-channel 75v - 0.0095q- 80a - to-220 - to-220fp - d2pak stripfet? ii power mosfet general features type stb75nf75 STP75NF75 STP75NF75fp vdss 75v 75v 75v rds(on) <0.011d <0.011j <0.011j id 80a(1) 80a(1) soa'1' 1. current limited by package ? exceptional dv/dt capability ? 100% avalanche tested to-220 to-220fp d'pak internal schematic diagram applications ? switching application nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
stb75nf75 - STP75NF75 - STP75NF75fp electrical ratings electrical ratings table 1. absolute maximum ratings symbol vds vdgr vgs id(1) id(1> ldm<2> ptot dv/dt (3) eas(4) viso tj tstg parameter drain-source voltage (vgs = 0) drain-gate voltage (rgs = 20ktj) gate-source voltage drain current (continuous) at tc = 25c drain current (continuous) at tc=100c drain current (pulsed) total dissipation at tc = 25c derating factor peak diode recovery voltage slope single pulse avalanche energy insulation withstand voltage (rms) from all three leads to external heat sink (t=1s;tc=25c) operating junction temperature storage temperature value d2pak h"o-220 to-220fp 75 75 20 80 70 320 300 2.0 80 70 320 45 0.3 12 700 - 2000 -55 to 175 unit v v v a a a w w/c v/ns mj v "c 1. current limited by package 2. pulse width limited by safe operating area 3. isd 80a, di/dt <300a/us, vdd ^v(br)dss. tj 4. starting tj = 25 c, id = 40a, vdd = 37.5v table 2. thermal data symbol rthjc rthja t, parameter thermal resistance junction-case max thermal resistance junction-ambient max maximum lead temperature for soldering purpose*1' value d2pak /to-220 0.5 to-220fp 3.33 62.5 300 unit c/w c/w c 1. 1.6mm from case for 10sec)
electrical characteristics stb75nf75 - STP75NF75 - STP75NF75fp electrical characteristics (tcase=25c unless otherwise specified) table 3. on/off states symbol v(br)dss bss 'gss vgs(th) rds(on) parameter drain-source breakdown voltage zero gate voltage drain current (vgs = 0) gate body leakage current (vds = 0) gate threshold voltage static drain-source on resistance test conditions id = 250ua, vgs= 0 vds = max rating, vds= max rating @125c vgs = 20v vds=vgs, !d=250ua vgs=10v, id=40a min. 75 2 typ. 3 0.0095 max. 1 10 100 4 0.011 unit v ua ma na v ti table 4. dynamic symbol gfs(1) ciss coss crss qg qgs qgd parameter forward transconductance input capacitance output capacitance reverse transfer capacitance total gate charge gate-source charge gate-drain charge test conditions vds = 15v, 1d = 40a vds =25v, f = 1 mhz, vgs = 0 vdd = 60v, id = 80a v -10v gs min. typ- 20 3700 730 240 117 27 47 max. 160 unit s dp pf pf nc nc nc 1. pulsed: pulse duration=300us, duty cycle 1.5%
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